| PART |
Description |
Maker |
| AN580 |
INFRARED GESTURE SENSING
|
Silicon Laboratories
|
| IR236 |
Infrared Fever Sensing System User Manual
|
Guide Infrared
|
| TB300-HDB10P-BAC TB200-HDW10P-BAC TB200-HDB10P-BAC |
Patented, Absorption Infrared Gas sensing engine provides high accuracy in a compact low cost package.
Patented, Absorption Infrared Gas sensing engine provides high accuracy in a compact low cost package.
|
Amphenol Corporation
|
| S2-0209 |
High Linearity Position Sensing Detector with Signal Processing Circuit
|
Electronic Theatre Controls, Inc.
|
| FXLA108BQX12 FXLA10812 |
Low-Voltage Dual-Supply 8-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
| FXLA102L8X12 FXLA10212 |
Low-Voltage Dual-Supply 2-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
| FXLA108 FXLA108BQX |
Low-Voltage Dual-Supply 8-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
| TC9243F TC9243P E005443 TC9243 |
INFRARED REMOTE CONTROL SIGNAL TRANSMISSION LSI
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
